Title :
Ultrafast dynamics of excitons in crescent-shaped GaAs quantum-wires
Author :
Komori, K. ; Yasuhira, T. ; Wang, X.L. ; Ogura, M. ; Watanabe, M. ; Foerst, M. ; Dekorsy, T. ; Kurz, H.
Author_Institution :
Electrotechnical Lab., Tsukuba, Japan
Abstract :
Summary form only given. Semiconductor quantum nanostructures are expected as promising active materials for the ultrafast optoelectronic devices because of their high optical gain and nonlinearity. In this paper, we have investigated ultrafast exciton dynamics in high-quality quantum wires using high-sensitive nonlinear spectroscopy technique.
Keywords :
III-V semiconductors; excitons; gallium arsenide; photoluminescence; reflectivity; semiconductor quantum wires; time resolved spectra; GaAs; PL characteristics; carrier relaxation; coherent oscillations; crescent-shaped quantum-wires; differential reflectivity; high-quality quantum wires; high-sensitive nonlinear spectroscopy; reflection type pump-probe measurement; reflective electro-optic sampling; ultrafast exciton dynamics; Excitons; Gallium arsenide; Nanostructured materials; Nonlinear optical devices; Nonlinear optics; Optical devices; Optical materials; Optoelectronic devices; Semiconductor materials; Semiconductor nanostructures;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.962071
