Nondegenerate differential transmission of semiconductors: correlation-induced resonances

Author

Phillips, Malcolm ; Hailin Wang

Author_Institution

Dept. of Phys., Oregon Univ., Eugene, OR, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

205

Lastpage

206

Abstract

Summary form only given. It is well known that correlations between excitons strongly affect the optical properties of resonantly excited semiconductors. Few studies, however, have considered effects of correlations between excitons and unbound electrons or holes when a semiconductor is excited above the band gap. In this paper, we report the observation of a surprising correlation-induced resonance (CIR) that appears in differential transmission spectra of semiconductor quantum wells excited above the band gap. The properties of this CIR show that it is not due to biexciton formation, but instead may arise from correlations between excitons and unbound electrons or holes.

Keywords

III-V semiconductors; excitons; gallium arsenide; light transmission; optical pumping; semiconductor quantum wells; time resolved spectra; visible spectra; GaAs; HH excitons; absorption spectrum; biexciton-induced absorption resonance; correlation-induced resonances; excitons; lattice temperature; multiple QW; nondegenerate differential transmission; nondegenerate pumping; opposite circular polarization; optical properties; pump-probe delay; resonantly excited semiconductors; semiconductor quantum wells; time dependence; unbound electrons; unbound holes; Absorption; Charge carrier processes; Delay effects; Electron optics; Excitons; Optical pumping; Photonic band gap; Polarization; Probes; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-663-X

Type

conf

DOI

10.1109/QELS.2001.962072

Filename

962072