Ag dependence of holographic grating formation in chalcogenide thin films

Author

Yeo, Cheol Ho ; Lee, Jung Tae ; Park, Jung Il ; Lee, Yeong Jong ; Chung, Hong Bay

Author_Institution

Dept. of Electr. Mater. Eng., Kwangwoon Univ., Seoul, South Korea

Volume

2

fYear

2003

fDate

1-5 June 2003

Firstpage

741

Abstract

We have investigated the Ag dependence of holographic grating formation in chalcogenide thin films. Sample was formed by alternating a layer of Ag/As₄₀Ge₁₀Se₁₅S₃₅ and As₄₀Ge₁₀Se₁₅S₃₅/Ag to be increase the photosensitivity. In this study, holographic gratings have been formed using He-Ne laser (632.8 nm) under different polarization combinations (the intensity polarization holography, the phase polarization holography). The diffraction efficiency was obtained by +1st order intensity. As the results, we found the maximum diffraction efficiency in As₄₀Ge₁₀Se₁₅S₃₅/Ag thin film. Also, the maximum diffraction efficiency of the intensity polarization holography (P:P) is 21%.

Keywords

arsenic compounds; chalcogenide glasses; germanium compounds; holographic gratings; laser beam effects; light polarisation; metallic thin films; multilayers; selenium compounds; semiconductor thin films; silver; sulphur compounds; 632.8 nm; Ag dependence; Ag-AsGeSeS; chalcogenide thin films; diffraction efficiency; first order intensity; holographic grating formation; intensity polarization holography; phase polarization holography; photosensitivity; polarization combinations; Amorphous materials; Anisotropic magnetoresistance; Diffraction gratings; Holographic optical components; Holography; Optical films; Optical polarization; Optical refraction; Optical sensors; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on

ISSN

1081-7735

Print_ISBN

0-7803-7725-7

Type

conf

DOI

10.1109/ICPADM.2003.1218524

Filename

1218524