Title :
Microwave nonlinearities in Ge/Si avalanche photodiodes having a gain-bandwidth product of 300 GHz
Author :
Piels, M. ; Ramaswamy, A. ; Zaoui, W. Sfar ; Bowers, J.E. ; Kang, Y. ; Morse, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
Abstract :
The nonlinearity of a 300 GHz gain bandwidth separate absorption charge multiplication (SACM) Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second order dynamic range was 84.8 dB-Hzfrac12. The largest third order dynamic range was 101.5 dB-Hz2/3.
Keywords :
Ge-Si alloys; avalanche photodiodes; millimetre wave devices; GeSi; avalanche photodiodes; frequency 300 GHz; microwave nonlinearities; separate absorption charge multiplication; Absorption; Avalanche photodiodes; Bandwidth; Dynamic range; Frequency division multiplexing; High speed optical techniques; Linearity; Optical distortion; Optical receivers; Optical sensors; (040.1345) Avalanche photodiodes; (060.5625) Radio frequency photonics;
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
