A Si/SiGe based Impact Ionization Avalanche Transit Time Photodiode with ultra-high gain-bandwidth product (690GHz) for 10-Gb/s fiber communication

Author

Shi, J.-W. ; Kuo, F.-M. ; Hong, F.-C. ; Wu, Y.-S. ; Fulgoni, D.J.F. ; Nash, L.J. ; Palmer, M.J.

Author_Institution

Dept. of Electr. Eng., Nat. Central Univ., Jhongli

fYear

2009

fDate

22-26 March 2009

Firstpage

1

Lastpage

3

Abstract

We demonstrate Si/SiGe impact-ionization-avalanche-transit-time photodiodes at 830 nm wavelength. It achieves an ultra-high gain-bandwidth product (690 GHz, 30 GHz bandwidth) with high external efficiency (53.2%) and 10 Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.

Keywords

Ge-Si alloys; avalanche photodiodes; impact ionisation; optical fibre communication; silicon; silicon-on-insulator; Si-SiGe; active integrated circuit; avalanche transit time photodiode; bandwidth 30 GHz; bandwidth 690 GHz; bit rate 10 Gbit/s; fiber communication; impact ionization; silicon-on-insulator substrate; ultra-high gain-bandwidth product; wavelength 830 nm; Absorption; Bandwidth; Germanium silicon alloys; High speed optical techniques; Impact ionization; Optical fiber communication; Optical receivers; Photodiodes; Silicon germanium; Silicon on insulator technology; (230.5170) Photodiodes; (250.1345) Avalanche photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2606-5

Electronic_ISBN

978-1-55752-865-0

Type

conf

Filename

5032583