Title :
80 GHz bandwidth-gain-product Ge/Si avalanche photodetector by selective Ge growth
Author :
Wang, Xiaoxin ; Chen, Liang ; Chen, Wang ; Cui, Hailin ; Hu, Yan ; Cai, Pengfei ; Yang, Rong ; Hong, Ching-Yin ; Pan, Dong ; Ang, Kah-Wee ; Yu, Ming Bin ; Fang, Qing ; Lo, Guo Qiang
Author_Institution :
Nano Photonics, Inc., Woburn, MA
Abstract :
We demonstrate selectively grown Ge/Si avalanche photodetectors with a bandwidth of 10 GHz at gain = 8 at 1310 nm. The high bandwidth-gain-product of 80 GHz and Si monolithic integration capability offer great potentials for future applications.
Keywords :
Ge-Si alloys; avalanche photodiodes; optical receivers; photodetectors; semiconductor device measurement; semiconductor growth; Ge-Si; Ge/Si avalanche photodetector; Si monolithic integration; bandwidth-gain-product; frequency 80 GHz; selective Ge growth; wavelength 1310 nm; Absorption; Amorphous materials; Avalanche photodiodes; Boron; Monolithic integrated circuits; Optical materials; Photodetectors; Photonics; Semiconductor films; Substrates; (040.1345) Avalanche photodiodes; (160.1890) Detector materials;
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
