Title :
Origin of the gain-bandwidth-product enhancement in separate-absorption-charge-multiplication Ge/Si avalanche photodiodes
Author :
Zaoui, Wissem Sfar ; Chen, Hui-Wen ; Bowers, John E. ; Kang, Yimin ; Morse, Mike ; Paniccia, Mario J. ; Pauchard, Alexandre ; Campbell, Joe C.
Author_Institution :
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA
Abstract :
A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain-bandwidth-product over 800 GHz is reported. The origin of this dramatically high value is explained using well consentient measurement and simulation results.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; silicon; Ge-Si; avalanche photodiodes; gain-bandwidth-product; separate-absorption-charge-multiplication; Absorption; Avalanche photodiodes; Charge carrier processes; Educational institutions; III-V semiconductor materials; Ionization; Optical sensors; Pulse measurements; Resonance; Voltage; (040.0040) Detectors; 040.1345) Avalanche photodiodes (APDs);
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
