DocumentCode
1823157
Title
Origin of the gain-bandwidth-product enhancement in separate-absorption-charge-multiplication Ge/Si avalanche photodiodes
Author
Zaoui, Wissem Sfar ; Chen, Hui-Wen ; Bowers, John E. ; Kang, Yimin ; Morse, Mike ; Paniccia, Mario J. ; Pauchard, Alexandre ; Campbell, Joe C.
Author_Institution
ECE Dept., Univ. of California Santa Barbara, Santa Barbara, CA
fYear
2009
fDate
22-26 March 2009
Firstpage
1
Lastpage
3
Abstract
A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain-bandwidth-product over 800 GHz is reported. The origin of this dramatically high value is explained using well consentient measurement and simulation results.
Keywords
avalanche photodiodes; elemental semiconductors; germanium; silicon; Ge-Si; avalanche photodiodes; gain-bandwidth-product; separate-absorption-charge-multiplication; Absorption; Avalanche photodiodes; Charge carrier processes; Educational institutions; III-V semiconductor materials; Ionization; Optical sensors; Pulse measurements; Resonance; Voltage; (040.0040) Detectors; 040.1345) Avalanche photodiodes (APDs);
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location
San Diego, CA
Print_ISBN
978-1-4244-2606-5
Electronic_ISBN
978-1-55752-865-0
Type
conf
Filename
5032587
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