Measurement of lateral charge diffusion in thick, fully depleted, back-illuminated CCDs

Author

Karcher, Armin ; Bebek, Christopher J. ; Kolbe, William F. ; Maurath, Dominic ; Prasad, Valmiki ; Uslenghi, Michela ; Wagner, Martin

Author_Institution

Lawrence Berkeley Nat. Lab., CA, USA

Volume

3

fYear

2003

fDate

19-25 Oct. 2003

Firstpage

1513

Abstract

Lateral charge diffusion in back-illuminated CCDs directly affects the point spread function (PSF) and spatial resolution of an imaging device. This can be of particular concern in thick, back-illuminated CCDs. We describe a technique of measuring this diffusion and present PSF measurements for an 800×1100, 15 μm pixel, 280 μm thick, back-illuminated, p-channel CCD that can be over-depleted. The PSF is measured over a wavelength range of 450 nm to 650 nm and at substrate bias voltages between 6 V and 80 V.

Keywords

CCD image sensors; optical transfer function; spatial variables measurement; 1100 pixel; 15 micron; 280 micron; 450 to 650 nm; 6 to 80 V; 800 pixel; imaging device; lateral charge diffusion measurement; point spread function; spatial resolution; thick fully depleted back-illuminated p-channel CCD; Charge coupled devices; Charge measurement; Current measurement; Extraterrestrial measurements; Laboratories; Size measurement; Spatial resolution; Thickness measurement; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2003 IEEE

ISSN

1082-3654

Print_ISBN

0-7803-8257-9

Type

conf

DOI

10.1109/NSSMIC.2003.1352164

Filename

1352164