DocumentCode
1823298
Title
Protection of a 3.3V domain and switchable 1.8V/3.3V I/O in a 40nm pure 1.8V process
Author
Van der Borght, Johan ; Van Wijmeersch, Sven ; Serneels, Bert ; Goodings, Chris
Author_Institution
Sofics BVBA, Aalter, Belgium
fYear
2011
fDate
11-16 Sept. 2011
Firstpage
1
Lastpage
6
Abstract
Today´s advanced technologies´ overdrive transistors cannot always meet the signal speeds of existing standards. This paper describes the issues, solutions and results to build the necessary protection for HBM, MM, CDM and latch-up for a 3.3V domain and 1.8V/3.3V I/O, based only on 1.8V transistors, in a 40nm process.
Keywords
transistors; necessary protection; overdrive transistors; signal speeds; size 40 nm; voltage 1.8 V; voltage 3.3 V; Clamps; Electrostatic discharge; MOS devices; Network topology; Thyristors; Topology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location
Anaheim, CA
ISSN
Pending
Electronic_ISBN
Pending
Type
conf
Filename
6045564
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