Title :
On gated diodes for ESD protection in bulk FinFET CMOS technology
Author :
Thijs, Steven ; Griffoni, Alessio ; Linten, Dimitri ; Chen, Shih-Hung ; Hoffmann, Thomas ; Groeseneken, Guido
Author_Institution :
Imec, Leuven, Belgium
Abstract :
The transient behavior of bulk FinFET gated diodes is investigated under ESD conditions. Series diodes are studied in circuit configuration to evaluate their effectiveness as local clamp or traditional dual-diode ESD protection solution. An optimal diode layout configuration is proposed, considering thermal properties, area footprint, capacitive loading and voltage clamping capability.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; protection; semiconductor diodes; ESD protection; bulk FinFET CMOS technology; bulk FinFET gated diodes; capacitive loading; circuit configuration; optimal diode layout configuration; series diodes; thermal property; traditional dual-diode ESD protection solution; voltage clamping capability; Clamps; Current measurement; Electrostatic discharge; FinFETs; Layout; Logic gates; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
Electronic_ISBN :
Pending
