• DocumentCode
    1823395
  • Title

    High-temperature operation MOS-IGBT power clamp for improved ESD protection in smart power SOI technology

  • Author

    Arbess, H. ; Trémouilles, D. ; Bafleur, M.

  • Author_Institution
    LAAS, CNRS, Toulouse, France
  • fYear
    2011
  • fDate
    11-16 Sept. 2011
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    We propose a new MOS-IGBT power clamp for high-temperature operation providing a very compact high-robustness ESD protection with low temperature sensitivity. It is achieved by inserting in the same LDMOS device P+ diffusions in the drain with various N+/P+ ratios whose impact on RON and holding current at high temperatures is thoroughly studied.
  • Keywords
    MOSFET; electrostatic discharge; high-temperature electronics; insulated gate bipolar transistors; power transistors; silicon-on-insulator; ESD protection; LDMOS device P+ diffusions; MOS-IGBT power clamp; Si; high-temperature operation; low temperature sensitivity; smart power SOI technology; Current measurement; Electrostatic discharge; Insulated gate bipolar transistors; Logic gates; Robustness; Temperature measurement; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
  • Conference_Location
    Anaheim, CA
  • ISSN
    Pending
  • Electronic_ISBN
    Pending
  • Type

    conf

  • Filename
    6045568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1823395