• DocumentCode
    1823417
  • Title

    Source engineering for ESD robust NLDMOS

  • Author

    Fujiwara, Shuji ; Nakaya, Kiyofumi ; Hirano, Tetsuro ; Okuda, Toshihiro ; Watanabe, Yuichi

  • Author_Institution
    SANYO Semicond. Co., Ltd., Gifu, Japan
  • fYear
    2011
  • fDate
    11-16 Sept. 2011
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    ESD robustness dependences on the source structures of NLDMOS are studied. Improved ESD durability and smaller die-to-die variations are successfully obtained with an extended source diffusion width and an island shape body contact. Mechanisms of ESD durability improvements were analyzed by the emission microscope measurements and 3D TCAD simulations.
  • Keywords
    MOSFET; diffusion; electrostatic discharge; emission; 3D TCAD simulations; ESD robust NLDMOS; emission microscope measurements; extended source diffusion; island shape body contact; smaller die-to-die variations; source engineering; Current distribution; Electrostatic discharge; Fingers; Lattices; Robustness; Shape; Three dimensional displays;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
  • Conference_Location
    Anaheim, CA
  • ISSN
    Pending
  • Electronic_ISBN
    Pending
  • Type

    conf

  • Filename
    6045569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1823417