Title :
Source engineering for ESD robust NLDMOS
Author :
Fujiwara, Shuji ; Nakaya, Kiyofumi ; Hirano, Tetsuro ; Okuda, Toshihiro ; Watanabe, Yuichi
Author_Institution :
SANYO Semicond. Co., Ltd., Gifu, Japan
Abstract :
ESD robustness dependences on the source structures of NLDMOS are studied. Improved ESD durability and smaller die-to-die variations are successfully obtained with an extended source diffusion width and an island shape body contact. Mechanisms of ESD durability improvements were analyzed by the emission microscope measurements and 3D TCAD simulations.
Keywords :
MOSFET; diffusion; electrostatic discharge; emission; 3D TCAD simulations; ESD robust NLDMOS; emission microscope measurements; extended source diffusion; island shape body contact; smaller die-to-die variations; source engineering; Current distribution; Electrostatic discharge; Fingers; Lattices; Robustness; Shape; Three dimensional displays;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
Electronic_ISBN :
Pending
