Effect of mobility on (IV) characteristics of GaAs MESFET

Author

Saidi, Y. ; Alliouat, W. ; Hamma, I. ; Zaabat, Mourad ; Azizi, Masood ; Azizi, Cherifa

Author_Institution

Dept. of Phys., Mentouri Univ. Constantine, Constantine, Algeria

fYear

2011

fDate

8-10 Sept. 2011

Firstpage

227

Lastpage

231

Abstract

We present in this paper an analytical model of the current-voltage (I-V) characteristics for submicron GaAs MESFET transistors. This model takes account the analysis of the charge distribution in the active region and incorporate a field depended electron mobility, velocity saturation and charge build-up in the channel. We propose In this framework an algorithm of simulation based on mathematical expressions obtained previously. The results obtained of the model are discussed and compared with those of the experimental data reading obtained from the literature [1], The agreement has been shown to be good.

Keywords

III-V semiconductors; Schottky gate field effect transistors; carrier mobility; gallium arsenide; mathematical analysis; semiconductor device models; GaAs; MESFET transistors; charge build-up; charge distribution; current-voltage characteristics; electron mobility; mathematical expressions; mobility effect; velocity saturation; GaAs; MESFET; Modelling; mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Power Electronics and 2011 Electromotion Joint Conference (ACEMP), 2011 International Aegean Conference on

Conference_Location

Istanbul

Print_ISBN

978-1-4673-5004-4

Electronic_ISBN

978-1-4673-5002-0

Type

conf

DOI

10.1109/ACEMP.2011.6490600

Filename

6490600