Title :
Active clamp implementation in complementary BiCMOS process with high voltage BJT devices
Author :
Vashchenko, Vladislav ; Shibkov, Andrei
Author_Institution :
Nat. Semicond. Corp., Sunnyvale, CA, USA
Abstract :
A small footprint active clamp design with low voltage CMOS and high voltage BJT components in complementary BiCMOS process is proposed, analyzed by mixed-mode simulation and experimentally validated. The new clamp is composed from stacked NMOS driver and power BJT to achieve appropriate voltage tolerance. Both NPN and PNP-based versions of the clamp are compared to the stacked NMOS clamp.
Keywords :
BiCMOS integrated circuits; active networks; bipolar transistors; driver circuits; electrostatic discharge; active clamp implementation; complementary BiCMOS process; high voltage BJT devices; low voltage CMOS; mixed mode simulation; power BJT; small footprint active clamp design; stacked NMOS driver; Arrays; BiCMOS integrated circuits; CMOS integrated circuits; Clamps; Electrostatic discharge; Integrated circuit modeling; MOS devices;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
Electronic_ISBN :
Pending
