Defects in Langmuir-Blodgett films and their influence on electric properties

Summary form only given. The use of the Langmuir-Blodgett (LB) technique to construct various multilayered structures of potential use in molecular electronics is discussed. The defects in the films and their distribution have been studied mainly by investigating dislocations in the films and traps situated on both the impurities and the interfaces between the films and the substrates. To investigate the structure of the multilayer films with or without the mosaic spread, X-ray diffraction was used. The electronic properties of LB insulating films in their pre-dielectric-breakdown range, i.e. the time-dependent dielectric breakdown (TDDB) characteristic, was studied. Preliminary results showed that TDDB is very likely to be defect related. The defect density distribution at the film-substrate interface was obtained from the model proposed, which provides an excellent means of probing defect concentrations