Title :
Scalable modeling studies on the SCR ESD protection device
Author :
Romanescu, Alexandru ; Beckirch-Ros, Helene ; Fonteneau, Pascal ; Legrand, Charles-Alexandre ; Ferrari, Philippe ; Arnould, Jean-Daniel
Author_Institution :
ST Microelectron., Crolles, France
Abstract :
The demand for continuous improvements in ESD design and simulations brings the need of new and more accurate scalable models. For the SCR (silicon controlled rectifier), one of the most efficient ESD protection device, a scalability study was carried out, based on a previously developed model that emphasizes a tight relation between its equations and the actual physical phenomena.
Keywords :
electrostatic discharge; semiconductor device models; thyristors; ESD design; SCR ESD protection device; silicon controlled rectifier; Electrostatic discharge; Equations; Integrated circuit modeling; Mathematical model; Parameter extraction; Thyristors; Transistors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2011 33rd
Conference_Location :
Anaheim, CA
Electronic_ISBN :
Pending
