DocumentCode
1824012
Title
Avalanche growth in Ar+SF6 mixtures
Author
Raju, G. R Govinda
Author_Institution
Dept. of Electr. & Comput. Eng., Windsor Univ., Ont., Canada
Volume
3
fYear
2003
fDate
1-5 June 2003
Firstpage
999
Abstract
Parameters that influence the growth of an electron avalanche are drift velocity, mean and characteristic energy, ionization coefficient and in electron attaching gases, the attachment coefficient. These parameters can be calculated by solving the Boltzmann equation numerically, and by appropriate integration of the resulting electron energy distribution. In this paper the results of such calculations have been provided for mixtures of argon and sulphur hexafluoride. The computations have been carried out over a wide range of E/N (E=electric field, N=gas number density) in each gas separately. The results are compared with the published data, to establish that correct cross sections have been employed. The technique is then extended to the mixture and the swarm parameters are presented both as a function of E/N and gas mixture ratio. An interesting finding is that the swarm coefficients and the electron-neutral collision frequency do not change monotonically as the mixture proportion is increased from argon to SF6 An abrupt decrease in collision frequency is observed with small percentage mixtures of argon in SF6.
Keywords
Boltzmann equation; SF6 insulation; argon; electron avalanches; gas mixtures; Ar; Ar-SF6; Ar-SF6 mixtures; Boltzmann equation; SF6; argon; attachment coefficient; avalanche growth; drift velocity; electron attaching gases; electron avalanches; electron energy distribution; electron-neutral collision frequency; gas mixture ratio; gas number density; ionization coefficient; sulphur hexafluoride; swarm coefficients; Argon; Design engineering; Electrons; Equations; Gas industry; Gases; Ionization; Power engineering and energy; Resonance; Sulfur hexafluoride;
fLanguage
English
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
ISSN
1081-7735
Print_ISBN
0-7803-7725-7
Type
conf
DOI
10.1109/ICPADM.2003.1218590
Filename
1218590
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