• DocumentCode
    1824360
  • Title

    Monte-Carlo modeling of Langmuir evaporation of GaAs (111) substrates

  • Author

    Alekseeva, Alena A. ; Nastovjak, Alla G. ; Shwartz, Nataliya L.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2013
  • fDate
    1-5 July 2013
  • Firstpage
    3
  • Lastpage
    5
  • Abstract
    A kinetic Monte-Carlo model of the Langmuir evaporation of GaAs (111) surfaces was realized. Transition from congruent evaporation to incongruent one was observed at congruent evaporation temperature Tc. The reason of such transition is liquid Ga droplet formation at temperatures above Tc. The value of model congruent evaporation temperature is in accordance with experiment.
  • Keywords
    III-V semiconductors; Monte Carlo methods; evaporation; gallium arsenide; substrates; GaAs; GaAs (111) substrates; Langmuir evaporation; congruent evaporation; incongruent evaporation; kinetic Monte-Carlo model; liquid Ga droplet formation; Annealing; Gallium; Gallium arsenide; Liquids; Monte Carlo methods; Solids; Surface treatment; GaAs; Monte Carlo; evaporation; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
  • Conference_Location
    Novosibirsk
  • ISSN
    2325-4173
  • Print_ISBN
    978-1-4799-0761-8
  • Type

    conf

  • DOI
    10.1109/EDM.2013.6641925
  • Filename
    6641925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1824360