DocumentCode :
1824360
Title :
Monte-Carlo modeling of Langmuir evaporation of GaAs (111) substrates
Author :
Alekseeva, Alena A. ; Nastovjak, Alla G. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear :
2013
fDate :
1-5 July 2013
Firstpage :
3
Lastpage :
5
Abstract :
A kinetic Monte-Carlo model of the Langmuir evaporation of GaAs (111) surfaces was realized. Transition from congruent evaporation to incongruent one was observed at congruent evaporation temperature Tc. The reason of such transition is liquid Ga droplet formation at temperatures above Tc. The value of model congruent evaporation temperature is in accordance with experiment.
Keywords :
III-V semiconductors; Monte Carlo methods; evaporation; gallium arsenide; substrates; GaAs; GaAs (111) substrates; Langmuir evaporation; congruent evaporation; incongruent evaporation; kinetic Monte-Carlo model; liquid Ga droplet formation; Annealing; Gallium; Gallium arsenide; Liquids; Monte Carlo methods; Solids; Surface treatment; GaAs; Monte Carlo; evaporation; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
ISSN :
2325-4173
Print_ISBN :
978-1-4799-0761-8
Type :
conf
DOI :
10.1109/EDM.2013.6641925
Filename :
6641925
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1824360
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