Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice

Author

Emelyanov, Eugene A. ; Putyato, Mikhail A. ; Semyagin, Boris R. ; Feklin, Dmitrii F. ; Preobrazhenskii, Valerii V.

Author_Institution

A.V. Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2013

fDate

1-5 July 2013

Firstpage

6

Lastpage

9

Abstract

Impact of substrate temperature, fuxes of As₂, P₂ and Ga on the layers composition of solid solution GaP_xAs_1-x(001) during molecular-beam epitaxy (MBE) was experimentally investigated. The experimental data obtained for a wide range of growth conditions were analyzed. The analysis results are represented in the form of the kinetic model describing the formation process for composition of GaP_xAs_1-x(001) solid solution during MBE. The model can be used for the choice of growth conditions of GaP_xAs_1-x(001) at a given phosphorus fraction.

Keywords

III-V semiconductors; gallium compounds; molecular beam epitaxial growth; phosphorus compounds; semiconductor epitaxial layers; semiconductor growth; solid solutions; GaP_xAs_1-x; MBE; molecular beam epitaxy; phosphorus fraction; solid solutions; Chemical elements; Molecular beam epitaxial growth; Physics; Semiconductor process modeling; Solid modeling; Solids; Surface reconstruction; Molecular-beam epitaxy (MBE); arsenic; dimers; phosphorus; solid solution of GaPxAs1−x(001); sublattice composition;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-0761-8

Type

conf

DOI

10.1109/EDM.2013.6641926

Filename

6641926