Title :
Stochastic resonance in VO2 thin films
Author :
Aliev, Vladimir Sh ; Bortnikov, Sergey G. ; Gerasimova, Alina K.
Author_Institution :
Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
The phenomenon of stochastic resonance was found in vanadium dioxide films with conducting channel. Experimentally observed transfer coefficient of signal-to-noise ratio amounted of 250 in scheme. By adjusting input noise power it became possible to amplify amplitude of input signal in ratio of 1.6. The computer model was suggested to explain experimental dependencies of signal-to-noise ratio via input noise power.
Keywords :
Gaussian noise; metal-insulator transition; semiconductor materials; semiconductor thin films; vanadium compounds; Gaussian white noise signal; VO2; computer model; conducting channel; input noise power; input signal amplitude; semiconductor material; semiconductor-metal phase transition; signal-to-noise ratio; stochastic resonance; transfer coefficient; vanadium oxide thin films; Electron devices; Films; Nanoscale devices; Resistance; Signal to noise ratio; Stochastic resonance; Stochastic resonance; signal-to-noise ratio; vanadium dioxide;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641927
