DocumentCode
1824605
Title
Ultrasmall memories based on electron transfer reactions
Author
Beratan, David N. ; Hopfield, J.J. ; Onuchic, José Nelson
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
1989
fDate
9-12 Nov 1989
Abstract
Summary form only given. An electronic shift register memory at the molecular level is described. The memory elements are based on a chain of electron transfer molecules, and the information is shifted by photoinduced electron transfer reactions. This device integrates designed electronic molecules onto a very-large-scale integrated (silicon microelectronic) substrate, providing an example of a molecular electronic device
Keywords
digital storage; molecular electronics; shift registers; VLSI substrate; chain; electron transfer molecules; electron transfer reactions; electronic molecules; electronic shift register memory; molecular level; photoinduced electron transfer reactions; ultrasmall memories; Biomedical electrodes; Chemical elements; Chemical technology; Chemistry; Clocks; Electrons; Laboratories; Propulsion; Shift registers; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Engineering in Medicine and Biology Society, 1989. Images of the Twenty-First Century., Proceedings of the Annual International Conference of the IEEE Engineering in
Conference_Location
Seattle, WA
Type
conf
DOI
10.1109/IEMBS.1989.96217
Filename
96217
Link To Document