Title :
Microstructure and properties of SCT thin film by RF sputtering method
Author :
Kim, J.S. ; Cho, C.N. ; Shin, C.G. ; Kim, C.H. ; Choi, W.S. ; Song, M.J. ; So, B.M. ; Lee, J.U.
Author_Institution :
Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea
Abstract :
The (Sr1-xCax)TiO3 (SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SCT thin films were influenced with substitutional contents of Ca. The composition of SCT thin films were closed to stoichiometry (1.081∼1.17 in A/B ratio). The maximum dielectric constant of thin film is obtained by annealing at 600[°C] of SCT15 thin film. The capacitance characteristics had a stable value below ±5[%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. In addition, leakage current increases and breakdown field decreases as a function of deposition temperature.
Keywords :
annealing; calcium compounds; capacitance; crystal microstructure; dielectric materials; dielectric relaxation; dielectric thin films; electric breakdown; leakage currents; permittivity; sputter deposition; stoichiometry; strontium compounds; (Sr1-xCax)TiO3 thin films; 600 degC; Ca substitutional contents; Pt-TiN-SiO2-Si; Pt-coated electrode; RF sputtering method; SrCaTiO3; annealing; breakdown field; capacitance; crystal microstructure; deposition temperature; dielectric constant; dielectric relaxation; electric properties; leakage current; relaxation frequency; stoichiometry; structural properties; Annealing; Dielectric constant; Dielectric thin films; Electrodes; Microstructure; Radio frequency; Semiconductor thin films; Sputtering; Strontium; Tin;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on
Print_ISBN :
0-7803-7725-7
DOI :
10.1109/ICPADM.2003.1218615
