Title :
Structural properties of silicon oxide prepared by high-power PECVD
Author :
Sidorov, Denis I. ; Mushinsky, Sergey S. ; Shevtsov, Denis I.
Author_Institution :
Perm Sci.-Ind. Instrum. Making Co., Perm, Russia
Abstract :
The paper presents results of structure analysis of silicon oxide films prepared by plasma enhanced chemical vapor deposition (PECVD) methods with a high power plasma excitation. The films were deposited from hexamethyldisilazane and oxygen mixture. Dependences on deposition parameters are presented.
Keywords :
dielectric thin films; plasma CVD; silicon compounds; SiO; deposition parameters; hexamethyldisilazane-oxygen mixture; high power plasma excitation; high-power PECVD; plasma enhanced chemical vapor deposition; silicon oxide films; structure analysis; Atomic layer deposition; Educational institutions; Films; Plasmas; Silicon; Substrates; EDX; FTIR; PECVD; Thin films; silicon oxide;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641936
