Title :
Monte Carlo simulation of GaAs nanostructure growth by droplet epitaxy
Author :
Suprunets, Anastasiya G. ; Vasilenko, Maxim A. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
Abstract :
A kinetic Monte Carlo model of droplet epitaxy is suggested. Proposed model was used for analysis of mechanisms of GaAs nanostructure formation during crystallization of Ga drops in arsenic flux. Depending on temperature and arsenic flux intensity different shapes of nanostructures can be achieved. A range of model growth conditions corresponding to core-shell compact clusters, crystal dots, nanoholes and nanorings was determined.
Keywords :
III-V semiconductors; Monte Carlo methods; epitaxial growth; gallium arsenide; nanofabrication; nanostructured materials; semiconductor growth; GaAs; arsenic flux; core-shell compact clusters; crystal dots; crystallization; droplet epitaxy; kinetic Monte Carlo simulation; nanoholes; nanorings; nanostructure; Crystallization; Epitaxial growth; Gallium; Gallium arsenide; Monte Carlo methods; Semiconductor process modeling; Substrates; GaAs; droplet epitaxy; nanostructures; simulation;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on
Conference_Location :
Novosibirsk
Print_ISBN :
978-1-4799-0761-8
DOI :
10.1109/EDM.2013.6641937
