Abnormal electrical capacitance behavior of VO2-films-based microstructures near semiconductor-to-metal phase transition

Author

Aliev, Vladimir Sh ; Bortnikov, Sergey G. ; Voronkovsky, Vitaliy A.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2013

fDate

1-5 July 2013

Firstpage

49

Lastpage

52

Abstract

Abnormal behavior of electrical capacity was investigated for planar microstructures consisting of VO₂ films grown on sapphire and metal (Ni/Au) electrodes. At heating from 293 K to 350 K abrupt change in electrical capacitance of microstructures was revealed by 7 orders of magnitude. Abnormally high electrical capacity is supposed to cause by metal clusters formation with divaricated surface in VO₂ films near semiconductor-to-metal phase transition.

Keywords

capacitance; metal-insulator transition; permittivity; sapphire; vanadium compounds; Al₂O₃; VO₂; abnormal electrical capacitance behavior; metal electrodes; planar microstructures; sapphire; semiconductor to metal phase transition; temperature 293 K to 350 K; Capacitance; Electrodes; Films; Fractals; Microstructure; Resistance; Temperature measurement; Vanadium dioxide; abnormal capacitance behavior; fractal surface;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2013 14th International Conference of Young Specialists on

Conference_Location

Novosibirsk

ISSN

2325-4173

Print_ISBN

978-1-4799-0761-8

Type

conf

DOI

10.1109/EDM.2013.6641938

Filename

6641938