DocumentCode
1825216
Title
Simulation of charge cloud evolution in silicon drift detectors
Author
Segal, J. ; Plummer, J. ; Kenney, C.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
Volume
1
fYear
1996
fDate
2-9 Nov 1996
Firstpage
558
Abstract
The spread of the signal during the drift period before collection is a critical parameter for silicon drift detector operation. In this work, simulations have been used to gain an understanding of the charge cloud evolution. Diffusion, Coulomb repulsion within the charge cloud, and variations in the drift field were all found to influence the signal spread. Fluctuations in dopant concentration were found to dramatically influence the drift field
Keywords
silicon radiation detectors; Coulomb repulsion; Si; Si drift detectors; charge cloud evolution; diffusion; dopant concentration; drift field; drift period; signal spread; Anodes; Clouds; Electrons; Fluctuations; Medical simulation; Physics; Radiation detectors; Silicon; Timing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location
Anaheim, CA
ISSN
1082-3654
Print_ISBN
0-7803-3534-1
Type
conf
DOI
10.1109/NSSMIC.1996.591061
Filename
591061
Link To Document