A V-band GaAs MMIC chip set on a highly reliable WSi/Au refractory gate process

Author

Mizoe, J. ; Matsumura, T. ; Unosawa, K. ; Akiba, Y. ; Nagai, K. ; Sato, H. ; Saryo, T. ; Inoue, T.

Author_Institution

C&C LSI Dev. Div., NEC Corp., Kawasaki, Japan

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

247

Abstract

A compact V-band GaAs MMIC chip set consisting of 1) a single highly integrated receiver MMIC with 6.5 dB N.F. and 2 dB conversion gain using a subharmonically pumped mixer and 2) a transmitter MMIC having a state-of-the-art 30-60 GHz doubler with 14.3 dB maximum conversion gain, 17.7 dBm output power and broadband RF characteristics has been successfully implemented with a refractory WSi/Au gate for high reliability. The HJFETs of these MMICs exhibited an MTTF of 4E7 hours at a channel temperature (Tch) of 130/spl deg/C. This result demonstrates high potential of our MMIC technology and to enable highly reliable and highly integrated V- and W-band systems.

Keywords

III-V semiconductors; JFET integrated circuits; field effect MIMIC; field effect MMIC; gallium arsenide; integrated circuit metallisation; integrated circuit reliability; millimetre wave receivers; radio transmitters; 14.3 dB; 2 dB; 30 GHz; 6.5 dB; 60 GHz; EHF doubler; GaAs; GaAs MMIC chip set; HJFETs; MMIC technology; V-band; WSi-Au; WSi/Au refractory gate process; high reliability; highly integrated receiver MMIC; subharmonically pumped mixer; transmitter MMIC; Circuits; Gallium arsenide; Gold; Laboratories; MIM capacitors; MMICs; Power system reliability; Radio frequency; Temperature; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604566

Filename

604566