A D-LDD (double lightly-doped drain) structure H-MESFET for MMIC applications

Author

Yamane, Y. ; Onodera, K. ; Nittono, T. ; Nishimura, K. ; Yamasaki, K. ; Kanda, A.

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

251

Abstract

This paper proposes a new D-LDD (Double Lightly-Doped Drain) structure for InGaP-InGaAs H-MESFETs (Heterostructure-MESFET). A D-LDD H-MESFET has three kinds of low resistant layers in the drain region, while a conventional H-MESFET has two layers. This structure improves MAG accompanied by Rd reduction with minimized gate-breakdown-voltage degradation and Cgd increase. These trade-offs between Rd and breakdown voltage are discussed in detail. Consequently, a typical MAG at 50 GHz exhibits 8.9 dB S21 in a MESFET and 7.7 dB S21 in a 1-stage amplifier. The high-frequency circuit operation proves that this technology is one of the most promising for MMIC applications.

Keywords

III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; electric breakdown; field effect MIMIC; field effect MMIC; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; 0.1 micron; 50 GHz; D-LDD structure; H-MESFET; InGaP-InGaAs; InGaP-InGaAs H-MESFETs; MMIC applications; double lightly-doped drain; gate-breakdown-voltage; heterostructure MESFET; Circuits; Degradation; FETs; Fabrication; Implants; Indium gallium arsenide; Laboratories; MESFETs; MMICs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604567

Filename

604567