1 Watt, 65% PAE K-band AlGaAs/GaAs heterojunction bipolar transistors using emitter air-bridge technology

Author

Hin-Fai Chau ; Hill, D. ; Yarborough, R. ; Tae Kim

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

Volume

1

fYear

1997

fDate

8-13 June 1997

Firstpage

259

Abstract

We report on the state-of-the-art power performance of K-band AlGaAs-GaAs heterojunction bipolar transistors (HBTs) which had emitter air-bridges to connect individual emitter fingers within the unit cells to reduce the emitter inductance and device thermal impedance. A 8/spl times/(1.6/spl times/30) /spl mu/m/sup 2/ HBT achieved 1.04 W CW output power and 65.7% power-added efficiency with 6.3 dB associated gain at 20 GHz. The maximum power-added efficiency measured was 67.5% at an output power level of 0.93 W.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 0.93 to 1.04 W; 20 GHz; 6.3 dB; 65.7 to 67.5 percent; AlGaAs-GaAs; K-band HBT; SHF; emitter air-bridge technology; emitter inductance reduction; heterojunction bipolar transistors; thermal impedance reduction; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Inductance; K-band; PHEMTs; Passivation; Power generation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.604569

Filename

604569