DocumentCode
1825707
Title
Ultrafast dynamics of extremely hot carriers in ZnTe and CdTe probed in the far infrared
Author
Schall, M. ; Jepsen, Peter Uhd
Author_Institution
Dept. of Molecular & Opt. Phys., Freiburg Univ., Germany
fYear
2001
fDate
11-11 May 2001
Firstpage
255
Abstract
Summary form only given. We present results of a new investigation of ultrafast dynamics of optically excited carriers in the technologically important II-VI semiconductors ZnTe and CdTe. We discuss the effects of the two-photon absorption process in detail, and address the recombination/trapping dynamics of the carriers subsequent to the initial energy relaxation.
Keywords
II-VI semiconductors; cadmium compounds; carrier mobility; high-speed optical techniques; hot carriers; two-photon processes; zinc compounds; 2-photon absorption process; CdTe; ZnTe; extremely hot carriers; far infrared; initial energy relaxation; optically excited carriers; recombination dynamics; technologically important II-VI semiconductors; trapping dynamics; two-photon absorption process; ultrafast dynamics; Absorption; Delay effects; Equations; Hot carriers; Laser excitation; Optical pulses; Photonic band gap; Temperature; Ultrafast optics; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-663-X
Type
conf
DOI
10.1109/QELS.2001.962213
Filename
962213
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