Hybrid electrically pumped evanescent Si/InGaAsP lasers

Author

Sun, Xiankai ; Zadok, Avi ; Shearn, Michael J. ; Diest, Kenneth A. ; Ghaffari, Alireza ; Atwater, Harry A. ; Scherer, Axel ; Yariv, Amnon

Author_Institution

Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA

fYear

2009

fDate

22-26 March 2009

Firstpage

1

Lastpage

3

Abstract

Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; optical fabrication; semiconductor lasers; silicon; wafer bonding; waveguide lasers; Fabry-Perot evanescent laser fabrication; Si-InGaAsP; current threshold density; hybrid electrically pumped evanescent laser; laser power; slope efficiency; turn-on voltage; wafer bonding; waveguide modal confinement; Distributed feedback devices; III-V semiconductor materials; Laser excitation; Laser modes; Power generation; Pump lasers; Semiconductor lasers; Threshold voltage; Wafer bonding; Waveguide lasers; (250.5300) Photonic integrated circuits; (250.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2606-5

Electronic_ISBN

978-1-55752-865-0

Type

conf

Filename

5032694