Title :
Hybrid electrically pumped evanescent Si/InGaAsP lasers
Author :
Sun, Xiankai ; Zadok, Avi ; Shearn, Michael J. ; Diest, Kenneth A. ; Ghaffari, Alireza ; Atwater, Harry A. ; Scherer, Axel ; Yariv, Amnon
Author_Institution :
Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA
Abstract :
Hybrid Si/InGaAsP Fabry-Perot evanescent lasers are fabricated via wafer bonding. Compared with previous similar devices, the current threshold density, turn-on voltage, output power and slope efficiency are all improved. Images show modal confinement to Silicon.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; optical fabrication; semiconductor lasers; silicon; wafer bonding; waveguide lasers; Fabry-Perot evanescent laser fabrication; Si-InGaAsP; current threshold density; hybrid electrically pumped evanescent laser; laser power; slope efficiency; turn-on voltage; wafer bonding; waveguide modal confinement; Distributed feedback devices; III-V semiconductor materials; Laser excitation; Laser modes; Power generation; Pump lasers; Semiconductor lasers; Threshold voltage; Wafer bonding; Waveguide lasers; (250.5300) Photonic integrated circuits; (250.5960) Semiconductor lasers;
Conference_Titel :
Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-2606-5
Electronic_ISBN :
978-1-55752-865-0
