Author :
Unno, Y. ; Kehriki, T. ; Terada, S. ; Iwasaki, H. ; Kondo, T. ; Nakao, M. ; Tamura, N. ; Fujita, K. ; Handa, T. ; Iwata, Y. ; Ohsugi, T. ; Dane, J. ; Pier, S. ; Ciocio, A. ; Emes, J. ; Gilchriese, M. ; Haber, C. ; Holland, S. ; Kipnis, I. ; Lozano-Bahile,
Abstract :
A large area (60 mm×60 mm) n-bulk and n-strip readout silicon strip detector was prototyped for the ATLAS SCT detector. Detector modules of 12 cm strip length were made by butting two detectors. One of the 12 cm modules was irradiated with protons to a fluence of 1.2×1014 p/cm2. A beam test was carried out for the non-irradiated and the irradiated detector modules. Efficiency, noise occupancy and performance in the edge regions were analyzed using the beam test data. High efficiency was obtained for the non-irradiated detector and for the irradiated detector for bias voltages down to about half the full depletion voltage. The noise occupancy was <2×10-4 for the 12 cm strips. The measurement of the edge region exhibited a difference in the sensitivity under the bias resistance where no extension of the n+-implant was fabricated
Keywords :
detector circuits; nuclear electronics; proton detection; semiconductor device noise; silicon radiation detectors; ATLAS SCT detector; Si; edge region; fast binary readout electronics; full depletion voltage; irradiated detector modules; large area n-on-n silicon strip detector; noise occupancy; protons; Detectors; Electronic equipment testing; Manufacturing processes; P-n junctions; Prototypes; Readout electronics; Semiconductor device noise; Silicon; Strips; Voltage;
