A double bandpass N-path filter for LTE carrier aggregation receivers in 28nm CMOS

Author

Elmaghraby, Adel ; Hamouda, Mahmoud ; Fischer, Georg ; Weigel, Robert ; Ussmueller, T.

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2014

fDate

6-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A tunable double bandpass integrated filter is introduced. The filter is designed based on the impedance transfer identity of the N-path filtering. The filter´s dual bandpass nature, makes it suitable to be employed as a high Q filter at the input of LTE receivers. It can be used to suppress out-of-band blockers in the non-contiguous carrier aggregation mode. Each of the two passbands can be tuned to be centered at each of the two LTE carriers. The design is simulated for LTE band 2 and the simulation results showed blocker suppression of 10 dB for blockers at the duplex distance and 12 dB of suppression for blockers at double the duplex distance.

Keywords

CMOS integrated circuits; Long Term Evolution; band-pass filters; radio receivers; CMOS; LTE carrier aggregation receivers; bandpass nature; blocker suppression; double bandpass N-path filter; duplex distance; impedance transfer identity; noncontiguous carrier aggregation mode; size 28 nm; tunable double bandpass integrated filter; Band-pass filters; Baseband; Clocks; Impedance; Passband; Receivers; Simulation; LTE CA; N-path filters; N-phase generator; double BP filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/WAMICON.2014.6857739

Filename

6857739