Title :
A 1.1 V very low-power ΣΔ modulator for 14-b 16 kHz A/D conversion using a novel class AB transconductance amplifier
Author :
Galan, J. ; VegaLeal, A.P. ; Muñoz, F. ; Carvajal, R.G. ; Torralba, A. ; Tombs, J. ; Ramirez-Angulo, Jaime
Author_Institution :
Dpto. de Ing. Electronica, Seville Univ., Spain
Abstract :
This paper presents a second order ΣΔ modulator implementation for a supply voltage of 1.1 V. A new fully differential CMOS class AB transconductance amplifier has been designed in order to achieve high-resolution under very-low-voltage and very-low-power operation. The modulator has been implemented using the AMS_CDS 0.35 μm CMOS technology and postlayout simulations have been performed showing 14 bits of resolution with an oversampling ratio of 160 and less than 40 μW of quiescent power consumption. To the author´s knowledge no other ΣΔ modulator has been reported with such a low quiescent consumption that achieves similar dynamic range and signal bandwidth.
Keywords :
CMOS integrated circuits; circuit simulation; low-power electronics; operational amplifiers; sigma-delta modulation; 0.35 micron; 1.1 V; 14 bit; 16 kHz; 40 muW; A/D conversion; AMS_CDS CMOS technology; class AB transconductance amplifier; dynamic range; fully differential CMOS amplifier; oversampling ratio; postlayout simulations; quiescent power consumption; signal bandwidth; very low-power ΣΔ modulator; very-low-power operation; very-low-voltage operation; CMOS technology; Delta modulation; Dynamic range; Leakage current; Operational amplifiers; Power engineering and energy; Power engineering computing; Switches; Threshold voltage; Transconductance;
Conference_Titel :
Circuits and Systems, 2002. ISCAS 2002. IEEE International Symposium on
Conference_Location :
Phoenix-Scottsdale, AZ
Print_ISBN :
0-7803-7448-7
DOI :
10.1109/ISCAS.2002.1011428
