DocumentCode
1826259
Title
Accelerated life test of an ONO stacked insulator film for a silicon micro-strip detector
Author
Okuno, Shoji ; Ikeda, Hirokazu ; Saitoh, Yutaka ; Inoue, Masahiro ; Yamanaka, Junko ; Akamine, Tadao
Author_Institution
Dept. of Ind. Eng. & Manage., Kanagawa Univ., Yokohama, Japan
Volume
1
fYear
1996
fDate
2-9 Nov 1996
Firstpage
578
Abstract
We have used to acquire the signal through an integrated capacitor for a silicon micro-strip detector. When we have been using a double-sided silicon micro-strip detector, we have required a long-term stability and a high feasibility for the integrated capacitor. An oxide-nitride-oxide (ONO) insulator film was theoretically expected to have a superior nature in terms of long term reliability. In order to test long term reliability for integrated capacitor of a silicon micro-strip detector, we made a multi-channel measuring system for capacitors
Keywords
semiconductor device reliability; semiconductor device testing; silicon radiation detectors; ONO stacked insulator film; Si; accelerated life test; double-sided silicon micro-strip detector; integrated capacitor; long-term stability; multi-channel measuring system; oxide-nitride-oxide insulator film; silicon micro-strip detector; Capacitors; Detectors; Insulation; Insulator testing; Life estimation; Life testing; Reliability theory; Silicon; Stability; System testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location
Anaheim, CA
ISSN
1082-3654
Print_ISBN
0-7803-3534-1
Type
conf
DOI
10.1109/NSSMIC.1996.591066
Filename
591066
Link To Document