Title :
Synthesis of nanocrystalline silicon carbide thin films by HW-CVD using ethane carbon precursor for photo detector application
Author :
Pawbake, A.S. ; Waman, V.S. ; Waykar, R.G. ; Mayabadi, A.H. ; Kulkarni, R.R. ; Pathan, H.M. ; Jadkar, S.R.
Author_Institution :
Pune 411007 #Dept. of Phys., SP Pune Univ., Pune, India
Abstract :
Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films were prepared by hot wire chemical vapor deposition (HW-CVD) method using ethane (C2H6) as a carbon precursor. The influence of deposition pressure on structural and optical properties was investigated. The formation of nc-SiC:H films was confirmed by low angle x-ray diffraction (XRD), Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy analysis. An inverse relation between deposition pressure and deposition rate was observed. Optical band gap values, ETauc and E04 increases with increase in deposition pressure. In fact, optical band gap values estimated from E04 method was found higher than the ETauc values calculated from Tauc´s plot. Finally, at optimized deposition pressure (450 mTorr), a photo detector having configuration glass/nc-SiC:H/Al have been fabricated and its photo response was studied. Further study is required to improve the quality of nc-SiC:H films to make use in photo detectors.
Keywords :
Fourier transform infrared spectra; Raman spectra; X-ray diffraction; chemical vapour deposition; energy gap; hydrogen; nanofabrication; nanosensors; nanostructured materials; optical constants; photodetectors; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; FTIR; Fourier transform infrared spectroscopy; Raman spectroscopy; SiC:H; Tauc´s plot; XRD; deposition rate; ethane carbon precursor; hot wire chemical vapor deposition; hydrogenated nanocrystalline silicon carbide; low angle X-ray diffraction; nanocrystalline silicon carbide thin film synthesis; optical band gap; optimized deposition pressure; photodetector application; pressure 450 mtorr; structural properties; Chemical vapor deposition; Detectors; Optical films; Photonic band gap; Silicon carbide; Substrates; H; HW-CVD; Photodetector; nc-SiC;
Conference_Titel :
Physics and Technology of Sensors (ISPTS), 2015 2nd International Symposium on
Conference_Location :
Pune
DOI :
10.1109/ISPTS.2015.7220089