A fully integrated 1–4 GHz GaN Class J power amplifier

Author

Tongning Wu ; Plett, Calvin ; Rogers, John W. M. ; Ming Li

Author_Institution

Dept. of Electron., Carleton Univ. Ottawa, Ottawa, ON, Canada

fYear

2014

fDate

6-6 June 2014

Firstpage

1

Lastpage

3

Abstract

A non-switching mode Class J power amplifier (PA) is presented. Its output power capability is improved by driving the active device into the non-linear region to generate extra harmonics. The output matching circuit is also structured to filter out unwanted harmonics to let the PA retain high efficiency and high linearity concurrently. A GaN Hetero-junction Field Effect transistor has a low output capacitance. Therefore, combining with a reactive load, a relatively broadband resonance circuit at GHz frequencies is designed. A fully integrated Class J PA., which has an area of 1.8 × 1.3 mm., is realized with measured 12% overall efficiency at the 2 dB compression point (P2dB), 3 GHz bandwidth, and 20.3 dBm output referred 1 dB compression.

Keywords

III-V semiconductors; circuit resonance; gallium compounds; harmonic generation; microwave field effect transistors; microwave power amplifiers; power HEMT; wide band gap semiconductors; GaN; active device; bandwidth 3 GHz; broadband resonance circuit; class J power amplifier; frequency 1 GHz to 4 GHz; heterojunction field effect transistor; integrated class J PA; matching circuit; nonlinear region; nonswitching mode; reactive load; size 1.3 mm; size 1.8 mm; unwanted harmonics generation; Bandwidth; Broadband communication; Gallium nitride; Harmonic analysis; Linearity; Power amplifiers; Power harmonic filters; Broadband; Class J; Gallium Nitride (GaN); Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual

Conference_Location

Tampa, FL

Type

conf

DOI

10.1109/WAMICON.2014.6857749

Filename

6857749