Title :
A introduction of sFCCSP - fine pitch low profile FCCSP solution
Author :
So, Erik ; Lan, Albert ; Hsiao, CS ; Chang, Nistec ; Kao, Feng
Author_Institution :
Siliconware Precision Ind. Co., Ltd., Taichung, Taiwan
Abstract :
As for mainstream portable application (Mobile Phone, Tablet, Handset Gamer), the higher density (array IO pitch ⇐ 100um), higher thermal performance (better theta JC than over-mold FCCSP) and lower profile (compare with over-mold FCCSP) is necessary for package developing. At present, followed the Moor´s law, the bump pitch of 28nm wafer technology has shrunk from 180~150um into 130~100um or even finer. Based on above considerations and product characteristic request, some suitable solution can be considered: Utilize Cu Pillar Bump to satisfy the fine pitch request and also implement Die Exposed for current FCCSP to achieve the lower profile & better thermal performance. As to come out an easy way to recognize the package type of this combination, the package type of “sFCCSP” (SPIL proposed FCCSP-Exposed Die Cu Pillar FCCSP) had be called for further discussion.
Keywords :
chip scale packaging; copper; flip-chip devices; system-on-package; wafer level packaging; Cu; Moor law; SPIL proposed FCCSP-exposed die Cu pillar FCCSP; bump pitch; fine pitch low profile FCCSP solution; fine pitch request; higher thermal performance; mainstream portable application; pillar bump; product characteristics request; sFCCSP; wafer technology;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
DOI :
10.1109/EPTC.2011.6184401