DocumentCode
1826690
Title
Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer
Author
Sun, Xin ; Zhu, Yunhui ; Ma, Shenglin ; Miao, Min ; Chen, Jing ; Jin, Yufeng
Author_Institution
Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
171
Lastpage
174
Abstract
In this paper, electrical characteristic of TSV (Through Silicon Via) is analyzed. Firstly, equivalent circuit model of TSV is summarized. Modeling and electrical analysis of TSV is conducted, in which TSVs with ideal and non-ideal profiles are compared. And then, multi-TSV configuration in silicon interposer is modeled and analyzed. Capacitive and inductive coupling between TSVs are simulated. With these analyses, solutions to decrease crosstalk between TSVs are proposed.
Keywords
SPICE; equivalent circuits; integrated circuit interconnections; silicon; SPICE model extraction; capacitive coupling; electrical modeling; equivalent circuit model; inductive coupling; multi-TSV configuration; through silicon via; vinterposer; Analytical models; Couplings; Crosstalk; Integrated circuit modeling; Silicon; Three dimensional displays; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location
Singapore
Print_ISBN
978-1-4577-1983-7
Electronic_ISBN
978-1-4577-1981-3
Type
conf
DOI
10.1109/EPTC.2011.6184409
Filename
6184409
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