DocumentCode :
1826690
Title :
Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer
Author :
Sun, Xin ; Zhu, Yunhui ; Ma, Shenglin ; Miao, Min ; Chen, Jing ; Jin, Yufeng
Author_Institution :
Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
171
Lastpage :
174
Abstract :
In this paper, electrical characteristic of TSV (Through Silicon Via) is analyzed. Firstly, equivalent circuit model of TSV is summarized. Modeling and electrical analysis of TSV is conducted, in which TSVs with ideal and non-ideal profiles are compared. And then, multi-TSV configuration in silicon interposer is modeled and analyzed. Capacitive and inductive coupling between TSVs are simulated. With these analyses, solutions to decrease crosstalk between TSVs are proposed.
Keywords :
SPICE; equivalent circuits; integrated circuit interconnections; silicon; SPICE model extraction; capacitive coupling; electrical modeling; equivalent circuit model; inductive coupling; multi-TSV configuration; through silicon via; vinterposer; Analytical models; Couplings; Crosstalk; Integrated circuit modeling; Silicon; Three dimensional displays; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
Type :
conf
DOI :
10.1109/EPTC.2011.6184409
Filename :
6184409
Link To Document :
بازگشت