Low-driving-current high-speed direct modulation up to 40 Gb/s using 1.3-μm semi-insulating buried-heterostructure AlGaInAs-MQW distributed reflector (DR) lasers

Author

Otsubo, K. ; Matsuda, M. ; Okumura, S. ; Uetake, A. ; Ekawa, M. ; Yamamoto, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi

fYear

2009

fDate

22-26 March 2009

Firstpage

1

Lastpage

3

Abstract

1.3-mum semi-insulating buried-heterostructure AlGaInAs-MQW distributed reflector lasers have shown very high slope value of relaxation oscillation frequency of 4.0 GHz/mA^frac12. 25- and 40-Gb/s direct modulation has been achieved with low driving current.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical modulation; quantum well lasers; semiconductor lasers; AlGaInAs; AlGaInAs-MQW distributed reflector laser; bit rate 40 Gbit/s; high-speed direct modulation; low driving current; multiple quantum well; relaxation oscillation frequency; semiinsulating buried-heterostructure laser; size 1.3 mum; Coatings; Frequency; High speed optical techniques; Laser feedback; Optical feedback; Optical modulation; Optical transmitters; Power lasers; Quantum well devices; Semiconductor lasers; (140.5960) Semiconductor lasers; (250.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication - incudes post deadline papers, 2009. OFC 2009. Conference on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2606-5

Electronic_ISBN

978-1-55752-865-0

Type

conf

Filename

5032740