Title :
Joint properties of Au stud bumps joined with Sn-3.5Ag solder by flip chip bonding
Author :
Lee, Young-Kyu ; Ko, Yong-Ho ; Yoo, Sehoon ; Lee, Chang-Woo
Author_Institution :
Dept. of Electron. Packaging Eng., Univ. of Sci. & Technol., Daejeon, South Korea
Abstract :
Joint properties of Au stud bumps joined with Sn-3.5Ag solder by flip chip bonding were investigated. Au stud bumps were bonded on SOP (solder on pad) at bonding temperature of 260°C and 300°C for 10sec, respectively. Aging treatment was carried out at 150°C for 100 and 300 hrs. After flip chip bonding, intermetallic compounds (IMCs) of AuSn, AuSn2, and AuSn4 were formed at interface between Au stud bump and Sn-3.5Ag solder. At bonding temperature of 300°C, AuSn2 IMC clusters, which were surrounded by AuSn4 IMC, were observed in the Sn-3.5Ag solder bumps. Also, (Au, Cu)6Sn5 IMC was formed at Sn/Cu interface. After flip chip bonding, bonding strength was approximately 22.5gf/bump. A typical fracture surface of as-bonded samples was intergranular fracture between AuSn2 and AuSn4 IMCs. Such phenomenon was similar for all specimens irrespective of bonding temperature. As aging time increased, AuSn and AuSn2 IMCs continuously grew while AuSn4 IMC decreased. After 300 hrs aging, thickness of AuSn2 IMC was higher than that of other Au-Sn IMCs. The bonding strength was decreased as aging time increased. After 100 hrs aging treatment, the bonding strength of 300°C flip chip bonding sample was lower than that of 260°C sample due to fast growth rate of AuSn and AuSn2 IMCs. Initial joint microstructures after flip chip bonding were closely related to the bonding strengths of aged samples.
Keywords :
ageing; flip-chip devices; fracture; gold alloys; lead bonding; silver alloys; solders; tin alloys; IMC clusters; SOP; SnAgAu; aging treatment; as-bonded samples; bonding strength; flip chip bonding; fracture surface; gold stud bumps; initial joint microstructures; intergranular fracture; intermetallic compounds; solder bumps; solder on pad; temperature 150 degC; temperature 260 degC; temperature 300 degC; time 10 s; time 100 hour; time 300 hour; Aging; Bonding; Copper; Flip chip; Gold; Joints; Tin;
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
DOI :
10.1109/EPTC.2011.6184420