Title :
Digital gallium arsenide upgrades for military systems
Author_Institution :
Defense Adv. Res. Projects Agency, Arlington, VA, USA
Abstract :
Digital gallium arsenide (GaAs) integrated circuits (ICs) are manufacturable with sufficiently high integration level, yield, and performance to be of great value to a variety of electronic systems. But, as with every new technology, there are substantial barriers to getting systems designers to use digital GaAs. To address this problem, DARPA has begun a program to demonstrate digital-GaAs-based subsystems that meet the needs of specific fielded military systems. Background information is presented on DARPA´s efforts in digital GaAs, the insertion demonstration projects are described, and trends and conclusions from these projects are summarized.<>
Keywords :
III-V semiconductors; digital integrated circuits; gallium arsenide; military systems; monolithic integrated circuits; DARPA; GaAs; digital ICs; digital-GaAs-based subsystems; insertion demonstration projects; integrated circuits; military systems; system upgrading; Digital audio players; Electronic equipment manufacture; Gallium arsenide; Integrated circuit manufacture; Integrated circuit technology; Manufacturing; Microprocessors; Military aircraft; Silicon; Throughput;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69284
