Title :
The isothermal dielectric relaxation currents in metal/holmium oxide/metal thin-film capacitors
Author_Institution :
Inst. of Phys., Tech. Univ. Wroclaw, Poland
Abstract :
In this paper the basic isothermal dielectric relaxation current (IDRC) characteristics of M/Ho2O3/M thin film structures measured in the time domain are presented. These characteristics were examined at various applied voltages. The influence of temperature and the insulator thickness was also studied. The charge released during the relaxation process was estimated. Experimental data are discussed taking into account the volume of the insulating film and Schottky barriers formed at the M/I boundaries
Keywords :
MIM devices; Schottky barriers; dielectric relaxation; electrets; holmium compounds; thermally stimulated currents; thin film capacitors; time-domain analysis; Ho2O3; M/Ho2O3/M thin film structures; Schottky barriers; applied voltage; charge release; insulator thickness; isothermal dielectric relaxation currents; metal/holmium oxide/metal thin-film capacitors; temperature dependence; time domain; Current measurement; Dielectric thin films; Isothermal processes; MIM capacitors; Metal-insulator structures; Polarization; Time measurement; Transistors; Voltage; Volume relaxation;
Conference_Titel :
Electrets, 1999. ISE 10. Proceedings. 10th International Symposium on
Conference_Location :
Athens
Print_ISBN :
0-7803-5025-1
DOI :
10.1109/ISE.1999.831963
