• DocumentCode
    1827637
  • Title

    Mapping high pressure Bridgman Cd0.8Zn0.2Te from Russia

  • Author

    Schieber, M. ; Hermon, H. ; James, R.B. ; Lund, J. ; Antolak, A. ; Morse, D. ; Kolesnikov, N.N. ; Ivanov, Yu.N. ; Goorsky, M.S. ; Van Scyoc, J.M. ; Yoon, H. ; Toney, J. ; Schlesinger, T.E. ; Doty, F.P. ; Cozzatti, J.P.D.

  • Author_Institution
    Sandia Nat. Labs., Livermore, CA, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    2-9 Nov 1996
  • Firstpage
    647
  • Abstract
    Mapping of single crystals of Cd(1-x/)Znsub x/Te (x=0.2) grown in Russia by the high pressure vertical Bridgman method, (HPVBM) under argon pressure of 2 to 10 MPa was performed using X-ray fluorescence (XRF), X-ray diffraction (XRD), photoluminescence (PL) and leakage current uniformity. The crystals were more uniform in Zn composition than US produced material but had a poorer crystallinity and in the best case could only count nuclear radiation. Differences in the material properties between Russian and US material will be described
  • Keywords
    II-VI semiconductors; X-ray diffraction; X-ray fluorescence analysis; cadmium compounds; crystal growth from melt; photoluminescence; semiconductor counters; zinc compounds; 2 to 10 MPa; Cd0.8Zn0.2Te; Russia; X-ray diffraction; X-ray fluorescence; high pressure vertical Bridgman method; leakage current uniformity; photoluminescence; semiconductor detectors; single crystals mapping; Argon; Crystalline materials; Crystallization; Crystals; Fluorescence; Photoluminescence; Tellurium; X-ray diffraction; X-ray scattering; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    1082-3654
  • Print_ISBN
    0-7803-3534-1
  • Type

    conf

  • DOI
    10.1109/NSSMIC.1996.591082
  • Filename
    591082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1827637