DocumentCode
1827664
Title
Cover
fYear
2009
fDate
25-28 Oct. 2009
Abstract
The following topics are dealt with: phase change memory; FRAM; non-volatile memory device; phase change material; electroforming; resistance-change memory device; barrier-engineered tunneling dielectric; floating gate flash memories; and NAND flash memories.
Keywords
electroforming; phase change materials; random-access storage; FRAM; NAND flash memories; barrier-engineered tunneling dielectric; electroforming; floating gate flash memories; nonvolatile memory device; phase change material; phase change memory; resistance-change memory device;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location
Portland, OR
Print_ISBN
978-1-4244-4953-8
Electronic_ISBN
978-1-4244-4954-5
Type
conf
DOI
10.1109/NVMT.2009.5429773
Filename
5429773
Link To Document