Title :
Gas avalanche pixel detectors
Author :
Hong, W.S. ; Cho, H.S. ; Perez-Mendez, V. ; Kadyk, J. ; Palaio, N.
Author_Institution :
Div. of Eng., Lawrence Berkeley Nat. Lab., CA, USA
Abstract :
We describe the structure and avalanche gain of microstrip pixel detectors. Each anode is a square 20 μm×20 μm in size connected to an individual pad through a plated center section. The cathodes are plated squares interconnected to a common lead. The anode squares have a pitch of 200 μm in both x-and y-directions. The anodes and cathodes are aluminum layers deposited on amorphous silicon alloyed with carbon (a-Si:C:H) to produce a bulk resistivity of ~1013 Ωcm. Measurements on signals from a group of anodes shows an avalanche gas gain close to 104 at a cathode-anode potential of 640 volts using a gas mixture of 50/50 argon-ethane. The avalanche gain is a factor of 3 higher than that of a same pitch microstrip device. For our initial measurements, 16 anodes were connected together to a charge sensitive preamplifier. In a final chamber each anode would be connected to a readout a-Si:H p-i-n diode and signals read out sequentially as in flat screen devices
Keywords :
detector circuits; electron avalanches; nuclear electronics; position sensitive particle detectors; preamplifiers; proportional counters; 20 mum; 200 mum; a-Si:C:H; a-Si:H p-i-n diode; aluminum layers; argon-ethane; avalanche gain; charge sensitive preamplifier; gas avalanche pixel detectors; microstrip pixel detectors; structure; Aluminum alloys; Amorphous silicon; Anodes; Cathodes; Conductivity; Current measurement; Detectors; Gain measurement; Microstrip; Silicon alloys;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.591086