Title :
Satellite test of radiation impact on Ramtron 512K FRAM
Author :
MacLeod, Todd C. ; Sims, W. Herb ; Varnavas, Kosta A. ; Sayyah, Rana ; Ho, Fat D.
Author_Institution :
Of Space Syst. Dept., NASA Marshall Space Flight Center, Huntsville, AL, USA
Abstract :
The Memory Test Experiment is a space test of a ferroelectric memory device on a low Earth orbit satellite. The test consists of writing and reading data with a ferroelectric based memory device. Any errors are detected and are stored on board the satellite. The data is send to the ground through telemetry once a day. Analysis of the data can determine the kind of error that was found and will lead to a better understanding of the effects of space radiation on memory systems. The test will be one of the first flight demonstrations of ferroelectric memory in a near polar orbit which allows testing in a varied radiation environment. The memory devices being tested is a Ramtron Inc. 512 K memory device. This paper details the goals and purpose of this experiment as well as the development process. The process for analyzing the data to gain the maximum understanding of the performance of the ferroelectric memory device is detailed.
Keywords :
aerospace testing; artificial satellites; error detection; ferroelectric storage; random-access storage; satellite telemetry; Earth orbit satellite; Ramtron 512 K FRAM; Ramtron Inc. 512 K memory device; data analysis; error detection; ferroelectric based memory device; ferroelectric memory device; memory devices; memory systems; memory test experiment; polar orbit; radiation environment; radiation impact; satellite test; space radiation; space test; telemetry; Data analysis; Ferroelectric films; Ferroelectric materials; Low earth orbit satellites; Nonvolatile memory; Random access memory; Read-write memory; Telemetry; Testing; Writing; FRAM; Radiation Test; Satellite; component;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4953-8
Electronic_ISBN :
978-1-4244-4954-5
DOI :
10.1109/NVMT.2009.5429778
