Molecular ion implantation technique for obtaining the same depth profile for the component atoms

The molecular ion implantation, in which the ions of polyatomic molecule are used as an implantation particle, is expected to have two main advantages: 1) obtaining the similar depth profiles of implanted component atoms of different elements at a single implantation, and 2) achieving simultaneous implantation of different atoms at the same position. In this paper, we have showed these advantages by an analytical estimation of the projected ranges for each implanted atoms of a polyatomic molecule, and then, by the computer simulation by TRIM. In addition, the experimental results obtained by SIMS were also presented. As for the evaluation of depth profiles, the overlap areas between two depth distributions were calculated by a numerical integration as a degree of the similarity between two depth profiles of different atoms. As a result, the projected ranges and overlap areas showed that depth profiles are almost the same in a usual Implantation energy range, except of hydrogen due to the lack of neutron in the nucleus. For the simple evaluation for the similarity of two depth profiles, a factor S was proposed instead of the overlap area