Title :
Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device
Author :
Das, N. ; Xue, Y.Y. ; Wang, Y.Q. ; Chu, C.W.
Author_Institution :
Dept. of Phys., Univ. of Houston, Houston, TX, USA
Abstract :
The phenomenon of electric pulse induced resistive switching in metal (Ag)-oxide (Pr0.7Ca0.3MnO3) interface has been studied in detail. Dielectric spectroscopy (frequency range ~ 10 Hz-10 Mz) has been used to investigate the formation of switched interface and underlying mesostructure. Resistance switch has been realized only over a voltage threshold (VTh) and a very fast `write´ speed (~100 ns or less) with excellent reversibility has been achieved. Detailed kinetics and relaxation studies are conducted with data retention time period of more than 108 sec (~years). Based on the above results, a defect creation/annihilation and lattice rearrangement model for switching has been developed. C-AFM (conductive AFM) has been used to study the nano inhomogeneity of the conductivity of metal-PCMO interface and a more complex percolation model has been outlined.
Keywords :
praseodymium compounds; random-access storage; switching circuits; Pr0.7Ca0.3MnO3-Jk; data retention time period; defect creation/annihilation; dielectric spectroscopy; electric pulse induced resistive switching; electrical characterization; lattice rearrangement model; non-volatile memory device; percolation model; resistive memory; voltage threshold; Capacitance; Electric resistance; Electrochemical impedance spectroscopy; Electromigration; Electron traps; Metal-insulator structures; Physics; Semiconductor process modeling; Switches; Thermal resistance; Maxwell Wagner relaxation; O2- vacancy; Perovskite; dielectric spectroscopy; mesostructure; point defects; resistive memory; transition metal oxide;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-4953-8
Electronic_ISBN :
978-1-4244-4954-5
DOI :
10.1109/NVMT.2009.5429779
