Contact resistance of TiW to Phase Change Material in the amorphous and crystalline states

Author

Roy, D. ; Zandt, M. A A int ; Wolters, R.A.M. ; Timmering, C.E. ; Klootwijk, J.H.

Author_Institution

NXP-TSMC Res. Center, Eindhoven, Netherlands

fYear

2009

fDate

25-28 Oct. 2009

Firstpage

12

Lastpage

15

Abstract

Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti_0.3W_0.7) to two phase change materials; doped-Sb₂Te and Ge₂Sb₂Te₅ are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120Â°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.

Keywords

amorphous state; antimony compounds; contact resistance; germanium compounds; metal-insulator boundaries; phase change materials; titanium alloys; tungsten alloys; Ti_0.3W_0.7-Ge₂Sb₂Te₅; Ti_0.3W_0.7-Sb₂Te:Jk; amorphous states; circular transfer length method; contact resistance; crystalline states; electrical property; phase change material; phase change random access memory cell; temperature 120 degC; Amorphous materials; Amorphous semiconductors; Contact resistance; Crystallization; Phase change materials; Phase change random access memory; Tellurium; Temperature; Titanium; Tungsten; CTLM; PCM; chalcogenide; contact resistance; specific contact resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-4953-8

Electronic_ISBN

978-1-4244-4954-5

Type

conf

DOI

10.1109/NVMT.2009.5429780

Filename

5429780